VS-8TQ080GSTRLPBF Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Current - Reverse Leakage @ Vr: 280 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
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Technische Details VS-8TQ080GSTRLPBF Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB, Current - Reverse Leakage @ Vr: 280 µA @ 80 V, Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A, Voltage - DC Reverse (Vr) (Max): 80 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-263AB (D²PAK), Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 500pF @ 5V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Voltage Coupled to Current - Reverse Leakage @ Vr: 80, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8.