VS-E5TH3012-N3 Vishay Semiconductors
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Technische Details VS-E5TH3012-N3 Vishay Semiconductors
Description: DIODE GEN PURP 1.2KV 30A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 113 ns, Technology: Standard, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V.
Weitere Produktangebote VS-E5TH3012-N3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-E5TH3012-N3 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 30A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 113 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 30 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V |
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