VS-EMF050J60U Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 88A 338W EMIPAK2
Power - Max: 338 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 88 A
Part Status: Obsolete
Supplier Device Package: EMIPAK2
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Operating Temperature: 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: EMIPAK2
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V
Current - Collector Cutoff (Max): 100 µA
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Technische Details VS-EMF050J60U Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 88A 338W EMIPAK2, Power - Max: 338 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 88 A, Part Status: Obsolete, Supplier Device Package: EMIPAK2, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Operating Temperature: 150°C (TJ), Configuration: Three Level Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: EMIPAK2, Packaging: Bulk, Input Capacitance (Cies) @ Vce: 9.5 nF @ 30 V, Current - Collector Cutoff (Max): 100 µA.