Technische Details VS-FC80NA20 Vishay
Description: MOSFET N-CH 200V 108A SOT227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 108A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V, Power Dissipation (Max): 405W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V.
Weitere Produktangebote VS-FC80NA20
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
VS-FC80NA20 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: MOSFET N-CH 200V 108A SOT227 Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 80A, 10V Power Dissipation (Max): 405W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10720 pF @ 50 V |
Produkt ist nicht verfügbar |
||
VS-FC80NA20 | Hersteller : Vishay Semiconductors | Discrete Semiconductor Modules Output & SW Modules - SOT-227 IGBT |
Produkt ist nicht verfügbar |
||
VS-FC80NA20 | Hersteller : VISHAY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 200V; 80A; SOT227B; Ugs: ±30V; screw; 405W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 200V Drain current: 80A Case: SOT227B Topology: buck chopper Electrical mounting: screw Polarisation: unipolar On-state resistance: 9.6mΩ Pulsed drain current: 170A Power dissipation: 405W Gate-source voltage: ±30V Mechanical mounting: screw |
Produkt ist nicht verfügbar |