VS-GA100TS60SFPBF Vishay General Semiconductor - Diodes Division


VS-GA100TS60SFPbF.pdf
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 600V 220A INT-A-PAK
Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 780 W
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 220 A
IGBT Type: PT
Supplier Device Package: INT-A-PAK
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: INT-A-PAK
Packaging: Bulk
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Technische Details VS-GA100TS60SFPBF Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 600V 220A INT-A-PAK, Input Capacitance (Cies) @ Vce: 16.25 nF @ 30 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 780 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 220 A, IGBT Type: PT, Supplier Device Package: INT-A-PAK, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 1.28V @ 15V, 100A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: INT-A-PAK, Packaging: Bulk.