VS-GB100TH120U Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: IGBT MOD 1200V 200A INT-A-PAK
Packaging: Bulk
Package / Case: Double INT-A-PAK (3 + 4)
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Double INT-A-PAK
IGBT Type: NPT
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1136 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 8.45 nF @ 20 V
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Technische Details VS-GB100TH120U Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 200A INT-A-PAK, Packaging: Bulk, Package / Case: Double INT-A-PAK (3 + 4), Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: Double INT-A-PAK, IGBT Type: NPT, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1136 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 8.45 nF @ 20 V.
Weitere Produktangebote VS-GB100TH120U
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| VS-GB100TH120U | Hersteller : Vishay Semiconductors |
IGBT Modules Output & SW Modules - DIAP IGBT |
Produkt ist nicht verfügbar |