VS-GB15XP120KTPBF Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 30A 187W MTP
Input Capacitance (Cies) @ Vce: 1.95 nF @ 30 V
Current - Collector Cutoff (Max): 250 µA
Power - Max: 187 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
IGBT Type: NPT
Supplier Device Package: MTP
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: 12-MTP Module
Configuration: Three Phase Inverter
Input: Standard
Packaging: Bulk
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Technische Details VS-GB15XP120KTPBF Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 30A 187W MTP, Input Capacitance (Cies) @ Vce: 1.95 nF @ 30 V, Current - Collector Cutoff (Max): 250 µA, Power - Max: 187 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 30 A, IGBT Type: NPT, Supplier Device Package: MTP, NTC Thermistor: Yes, Vce(on) (Max) @ Vge, Ic: 3.66V @ 15V, 30A, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: 12-MTP Module, Configuration: Three Phase Inverter, Input: Standard, Packaging: Bulk.