VS-GB50YF120N Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 66A ECONO2 4PACK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ECONO2 4PACK
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 250 µA
Description: IGBT MOD 1200V 66A ECONO2 4PACK
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: ECONO2 4PACK
Current - Collector (Ic) (Max): 66 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 330 W
Current - Collector Cutoff (Max): 250 µA
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Technische Details VS-GB50YF120N Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 66A ECONO2 4PACK, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Operating Temperature: 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 4.5V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: ECONO2 4PACK, Current - Collector (Ic) (Max): 66 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 330 W, Current - Collector Cutoff (Max): 250 µA.
Weitere Produktangebote VS-GB50YF120N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| VS-GB50YF120N | Hersteller : Vishay Semiconductors | IGBT Modules 1200 Volt 50 Amp |
Produkt ist nicht verfügbar |