VS-GT100DA120U Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 1200V 258A 893W SOT227, Current - Collector Cutoff (Max): 100 µA, Power - Max: 893 W, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 258 A, IGBT Type: Trench, Supplier Device Package: SOT-227, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A, Operating Temperature: -40°C ~ 150°C (TJ), Configuration: Single, Input: Standard, Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Bulk.