VS-GT100TS065N Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: MODULES IGBT - IAP IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK IGBT
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 259 W
Current - Collector Cutoff (Max): 50 µA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 91.08 EUR |
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Technische Details VS-GT100TS065N Vishay General Semiconductor - Diodes Division
Description: MODULES IGBT - IAP IGBT, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: INT-A-PAK IGBT, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 96 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 259 W, Current - Collector Cutoff (Max): 50 µA.
Weitere Produktangebote VS-GT100TS065N nach Preis ab 94.78 EUR bis 94.78 EUR
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VS-GT100TS065N | Hersteller : Vishay Semiconductors |
IGBT Modules Modules IGBT - IAP IGBT |
auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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