VS-GT200TS065N Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULES IGBT - IAP IGBT
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Current - Collector Cutoff (Max): 100 µA
Power - Max: 517 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 193 A
IGBT Type: Trench
Supplier Device Package: INT-A-PAK IGBT
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
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Technische Details VS-GT200TS065N Vishay General Semiconductor - Diodes Division
Description: MODULES IGBT - IAP IGBT, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Box, Current - Collector Cutoff (Max): 100 µA, Power - Max: 517 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 193 A, IGBT Type: Trench, Supplier Device Package: INT-A-PAK IGBT, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Half Bridge Inverter, Input: Standard.
Weitere Produktangebote VS-GT200TS065N nach Preis ab 103.8 EUR bis 139.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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VS-GT200TS065N | Vishay Semiconductors |
IGBT Modules Modules IGBT - IAP IGBT |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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| VS-GT200TS065N |
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Hersteller: Vishay Semiconductors
IGBT Modules Modules IGBT - IAP IGBT
IGBT Modules Modules IGBT - IAP IGBT
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 139.13 EUR |
| 10+ | 121.92 EUR |
| 105+ | 103.8 EUR |