VS-GT200TS065S Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: MODULES IGBT - IAP IGBT
Current - Collector Cutoff (Max): 200 µA
Power - Max: 1000 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 476 A
IGBT Type: Trench
Supplier Device Package: INT-A-PAK IGBT
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 1.32V @ 15V, 200A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
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Technische Details VS-GT200TS065S Vishay General Semiconductor - Diodes Division
Description: MODULES IGBT - IAP IGBT, Current - Collector Cutoff (Max): 200 µA, Power - Max: 1000 W, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 476 A, IGBT Type: Trench, Supplier Device Package: INT-A-PAK IGBT, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 1.32V @ 15V, 200A, Operating Temperature: -40°C ~ 175°C (TJ), Configuration: Half Bridge Inverter, Input: Standard, Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Box.
Weitere Produktangebote VS-GT200TS065S nach Preis ab 155.34 EUR bis 162.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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VS-GT200TS065S | Vishay Semiconductors |
IGBT Modules Modules IGBT - IAP IGBT |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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| VS-GT200TS065S |
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Hersteller: Vishay Semiconductors
IGBT Modules Modules IGBT - IAP IGBT
IGBT Modules Modules IGBT - IAP IGBT
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 162.22 EUR |
| 10+ | 155.34 EUR |