VS-GT50TP60N Vishay General Semiconductor - Diodes Division

Description: IGBT MOD 600V 85A 208W INT-A-PAK, IGBT Type: Trench, Supplier Device Package: INT-A-PAK, NTC Thermistor: No, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Operating Temperature: 175°C (TJ), Configuration: Half Bridge, Input: Standard, Mounting Type: Chassis Mount, Package / Case: INT-A-PAK (3 + 4), Packaging: Bulk, Input Capacitance (Cies) @ Vce: 3.03 nF @ 30 V, Current - Collector Cutoff (Max): 1 mA, Power - Max: 208 W, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 85 A.