Technische Details VS-GT50YF120NT Vishay Semiconductors
Description: IGBT MODULE 1200V 64A 231W, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A, NTC Thermistor: Yes, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 64 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 231 W, Current - Collector Cutoff (Max): 50 µA.
Weitere Produktangebote VS-GT50YF120NT nach Preis ab 154.56 EUR bis 180.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-GT50YF120NT | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: IGBT MODULE 1200V 64A 231WPackaging: Box Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 231 W Current - Collector Cutoff (Max): 50 µA |
auf Bestellung 108 Stücke: Lieferzeit 10-14 Tag (e) |
|