VS-HFA60FA120P Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 30A (DC)
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 123 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tray
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Technische Details VS-HFA60FA120P Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 30A SOT227, Current - Reverse Leakage @ Vr: 75 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: SOT-227, Current - Average Rectified (Io) (per Diode): 30A (DC), Diode Configuration: 2 Independent, Technology: Standard, Reverse Recovery Time (trr): 123 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: SOT-227-4, miniBLOC, Packaging: Tray.