VS-MBR350 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A C16
Current - Reverse Leakage @ Vr: 600 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: C-16
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Bulk
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Technische Details VS-MBR350 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 3A C16, Current - Reverse Leakage @ Vr: 600 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 730 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Obsolete, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: C-16, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 190pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Bulk.