VS-QA100FA10 Vishay Semiconductors
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 35.27 EUR |
| 10+ | 31.35 EUR |
| 100+ | 27.4 EUR |
| 250+ | 25.57 EUR |
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Technische Details VS-QA100FA10 Vishay Semiconductors
Description: POWER MODULE, GEN2 TRENCH MOS BA, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 50A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 50 A, Current - Reverse Leakage @ Vr: 800 µA @ 100 V.
Weitere Produktangebote VS-QA100FA10 nach Preis ab 22.21 EUR bis 37.01 EUR
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VS-QA100FA10 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: POWER MODULE, GEN2 TRENCH MOS BAPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50A Supplier Device Package: SOT-227 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.03 V @ 50 A Current - Reverse Leakage @ Vr: 800 µA @ 100 V |
auf Bestellung 156 Stücke: Lieferzeit 10-14 Tag (e) |
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