VS-SC200FA65 Vishay
Hersteller: Vishay
Description: DIODE MOD SIC 650V 100A SOT-227
Packaging: Strip
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
| Anzahl | Privatkunde |
|---|---|
| 1+ | 164.91 EUR |
| 10+ | 128.46 EUR |
| 50+ | 121.73 EUR |
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Technische Details VS-SC200FA65 Vishay
Description: DIODE MOD SIC 650V 100A SOT-227, Packaging: Strip, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 100A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 100 A, Current - Reverse Leakage @ Vr: 200 µA @ 650 V.
Weitere Produktangebote VS-SC200FA65 nach Preis ab 137.52 EUR bis 165.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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VS-SC200FA65 | Vishay |
SiC Schottky Diodes SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 200 A |
auf Bestellung 156 Stücke: Lieferzeit 10-14 Tag (e) |
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| VS-SC200FA65 |
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Hersteller: Vishay
SiC Schottky Diodes SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 200 A
SiC Schottky Diodes SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 200 A
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 165.81 EUR |
| 10+ | 137.52 EUR |