Technische Details VS-SC240FA65 Vishay
Description: MODULES RECTIFIERS - SOT-227 SIC, Packaging: Strip, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 120A, Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 120 A, Current - Reverse Leakage @ Vr: 240 µA @ 650 V.
Weitere Produktangebote VS-SC240FA65
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VS-SC240FA65 | Vishay |
 Description: MODULES RECTIFIERS - SOT-227 SICPackaging: Strip Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120A Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 120 A Current - Reverse Leakage @ Vr: 240 µA @ 650 V |
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| VS-SC240FA65 |
|
Hersteller: Vishay
Description: MODULES RECTIFIERS - SOT-227 SIC
Packaging: Strip
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 120 A
Current - Reverse Leakage @ Vr: 240 µA @ 650 V
Description: MODULES RECTIFIERS - SOT-227 SIC
Packaging: Strip
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.61 V @ 120 A
Current - Reverse Leakage @ Vr: 240 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH