VS-SF100SA120 Vishay Semiconductors
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 94.28 EUR |
| 10+ | 80.73 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details VS-SF100SA120 Vishay Semiconductors
Description: POWER MODULE, SINGLE SWITCH - SI, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 98A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 100A, 15V, Power Dissipation (Max): 468W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 14.22mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 4624 pF @ 1000 V.
Weitere Produktangebote VS-SF100SA120 nach Preis ab 69.67 EUR bis 92.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VS-SF100SA120 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: POWER MODULE, SINGLE SWITCH - SIPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 100A, 15V Power Dissipation (Max): 468W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 14.22mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4624 pF @ 1000 V |
auf Bestellung 158 Stücke: Lieferzeit 10-14 Tag (e) |
|