VSB20L45-M3/73 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6.5A P600
Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: P600
Current - Average Rectified (Io): 6.5A
Capacitance @ Vr, F: 2050pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Box (TB)
Produktrezensionen
Produktbewertung abgeben
Technische Details VSB20L45-M3/73 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 6.5A P600, Current - Reverse Leakage @ Vr: 1.2 mA @ 45 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 20 A, Voltage - DC Reverse (Vr) (Max): 45 V, Operating Temperature - Junction: -40°C ~ 150°C, Supplier Device Package: P600, Current - Average Rectified (Io): 6.5A, Capacitance @ Vr, F: 2050pF @ 4V, 1MHz, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: P600, Axial, Packaging: Tape & Box (TB).