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VSS8D3M15-M3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTT 150V 1.9A SLIMSMAW
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 190pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.9A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1.5 A
Current - Reverse Leakage @ Vr: 180 µA @ 150 V
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Technische Details VSS8D3M15-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 150V 1.9A SLIMSMAW, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 190pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.9A, Supplier Device Package: SlimSMAW (DO-221AD), Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1.5 A, Current - Reverse Leakage @ Vr: 180 µA @ 150 V.
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VSS8D3M15-M3/I | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTT 150V 1.9A SLIMSMAW Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 190pF @ 4V, 1MHz Current - Average Rectified (Io): 1.9A Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 760 mV @ 1.5 A Current - Reverse Leakage @ Vr: 180 µA @ 150 V |
Produkt ist nicht verfügbar |