VSS8D5M10-M3/I Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE SCHOTTK 100V 2.3A SLIMSMAW
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 480pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
auf Bestellung 10430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 21+ | 0.86 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| 2000+ | 0.25 EUR |
| 5000+ | 0.22 EUR |
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Technische Details VSS8D5M10-M3/I Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTK 100V 2.3A SLIMSMAW, Packaging: Tape & Reel (TR), Package / Case: DO-221AC, SMA Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 480pF @ 4V, 1MHz, Current - Average Rectified (Io): 2.3A, Supplier Device Package: SlimSMAW (DO-221AD), Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2.5 A, Current - Reverse Leakage @ Vr: 400 µA @ 100 V.
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Description: DIODE SCHOTTK 100V 2.3A SLIMSMAW Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 480pF @ 4V, 1MHz Current - Average Rectified (Io): 2.3A Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 2.5 A Current - Reverse Leakage @ Vr: 400 µA @ 100 V |
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