VSSB410S-M3/5BT Vishay General Semiconductor
auf Bestellung 3145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.71 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.22 EUR |
| 2500+ | 0.2 EUR |
| 5000+ | 0.17 EUR |
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Technische Details VSSB410S-M3/5BT Vishay General Semiconductor
Description: DIODE SCHOTTKY 100V 1.9A DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 230pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.9A, Supplier Device Package: DO-214AA (SMB), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A, Current - Reverse Leakage @ Vr: 250 µA @ 100 V.
Weitere Produktangebote VSSB410S-M3/5BT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VSSB410S-M3/5BT | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE SCHOTTKY 100V 1.9A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 230pF @ 4V, 1MHz Current - Average Rectified (Io): 1.9A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 4 A Current - Reverse Leakage @ Vr: 250 µA @ 100 V |
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