VT6T11T2R Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 36+ | 0.6 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.23 EUR |
| 2000+ | 0.2 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
28 Stücke
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Technische Details VT6T11T2R Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V, Frequency - Transition: 350MHz, Supplier Device Package: VMT6.
Weitere Produktangebote VT6T11T2R
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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VT6T11T2R | Rohm Semiconductor |
Description: PNP+PNP GENERAL PURPOSE AMPLIFICPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 150mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V Frequency - Transition: 350MHz Supplier Device Package: VMT6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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|
VT6T11T2R | ROHM Semiconductor |
Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| VT6T11T2R |
![]() |
Hersteller: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| VT6T11T2R |
![]() |
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH

