VT6T11T2R

VT6T11T2R Rohm Semiconductor


datasheet?p=VT6T11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
auf Bestellung 7990 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.63 EUR
36+ 0.5 EUR
100+ 0.3 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
2000+ 0.17 EUR
Mindestbestellmenge: 28
Produktrezensionen
Produktbewertung abgeben

Technische Details VT6T11T2R Rohm Semiconductor

Description: PNP+PNP GENERAL PURPOSE AMPLIFIC, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 20V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V, Frequency - Transition: 350MHz, Supplier Device Package: VMT6.

Weitere Produktangebote VT6T11T2R

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
VT6T11T2R VT6T11T2R Hersteller : Rohm Semiconductor datasheet?p=VT6T11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: PNP+PNP GENERAL PURPOSE AMPLIFIC
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: VMT6
Produkt ist nicht verfügbar
VT6T11T2R VT6T11T2R Hersteller : ROHM Semiconductor datasheet?p=VT6T11&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Bipolar Transistors - BJT PNP+PNP -20VCEO-0.2A VMT6
Produkt ist nicht verfügbar