VVZB135-16IOXT IXYS
Hersteller: IXYSDescription: DIODE BRIDGE 1600V 150A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 100 mA
Current - Gate Trigger (Igt) (Max): 80 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 700A, 755A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.4 V
Voltage - Off State: 1.6 kV
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Technische Details VVZB135-16IOXT IXYS
Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV, Mechanical mounting: screw, Technology: X2PT, Gate-emitter voltage: ±20V, Collector current: 84A, Pulsed collector current: 225A, Power dissipation: 390W, Case: E2-Pack, Max. off-state voltage: 1.2kV, Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor, Semiconductor structure: diode/thyristor/IGBT, Type of semiconductor module: IGBT, Application: Inverter, Electrical mounting: Press-in PCB.
Weitere Produktangebote VVZB135-16IOXT
| Foto | Bezeichnung | Hersteller | Beschreibung |
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VVZB135-16IOXT | Hersteller : IXYS |
Bridge Rectifiers Three Phase Rectifier Bridge |
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| VVZB135-16IOXT | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV Mechanical mounting: screw Technology: X2PT Gate-emitter voltage: ±20V Collector current: 84A Pulsed collector current: 225A Power dissipation: 390W Case: E2-Pack Max. off-state voltage: 1.2kV Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor Semiconductor structure: diode/thyristor/IGBT Type of semiconductor module: IGBT Application: Inverter Electrical mounting: Press-in PCB |
Produkt ist nicht verfügbar |