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VVZB170-16ioXT IXYS


VVZB170-16IOXT-1549613.pdf
Hersteller: IXYS
Bridge Rectifiers Thyristor Module
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Technische Details VVZB170-16ioXT IXYS

Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV, Type of semiconductor module: IGBT, Semiconductor structure: diode/thyristor/IGBT, Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor, Max. off-state voltage: 1.2kV, Collector current: 140A, Case: E2-Pack, Application: Inverter, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Power dissipation: 500W, Technology: X2PT, Mechanical mounting: screw.

Weitere Produktangebote VVZB170-16ioXT

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VVZB170-16ioXT IXYS VVZB170-16IOXT.pdf Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Voltage - Off State: 1.6 kV
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Mindestbestellmenge: 6 Stücke
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VVZB170-16ioXT IXYS VVZB170-16IOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VVZB170-16ioXT VVZB170-16IOXT.pdf
Hersteller: IXYS
Description: DIODE BRIDGE 1600V 180A
Packaging: Box
Package / Case: E2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 95 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1100A, 1190A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Part Status: Active
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VVZB170-16ioXT VVZB170-16IOXT.pdf
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH