| Anzahl | Preis |
|---|---|
| 1+ | 8.96 EUR |
| 10+ | 6.41 EUR |
| 100+ | 5.68 EUR |
| 288+ | 5.49 EUR |
| 576+ | 5.32 EUR |
| 1008+ | 5.07 EUR |
| 5040+ | 5.05 EUR |
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Technische Details W66AP6NBQAFJ Winbond
Description: IC DRAM 1GBIT LVSTL 200TFBGA, Memory Organization: 64M x 16, Access Time: 3.6 ns, Memory Interface: LVSTL_11, Write Cycle Time - Word, Page: 18ns, Supplier Device Package: 200-TFBGA (10x14.5), Memory Format: DRAM, Clock Frequency: 1.6 GHz, Technology: SDRAM - Mobile LPDDR4, Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V, Operating Temperature: -40°C ~ 105°C (TC), Memory Type: Volatile, Memory Size: 1Gbit, Mounting Type: Surface Mount, Package / Case: 200-TFBGA, Packaging: Tray.
Weitere Produktangebote W66AP6NBQAFJ nach Preis ab 6.45 EUR bis 9.15 EUR
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W66AP6NBQAFJ | Hersteller : Winbond Electronics |
 Description: IC DRAM 1GBIT LVSTL 200TFBGAMemory Organization: 64M x 16 Access Time: 3.6 ns Memory Interface: LVSTL_11 Write Cycle Time - Word, Page: 18ns Supplier Device Package: 200-TFBGA (10x14.5) Memory Format: DRAM Clock Frequency: 1.6 GHz Technology: SDRAM - Mobile LPDDR4 Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Memory Type: Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 200-TFBGA Packaging: Tray |
auf Bestellung 127 Stücke: Lieferzeit 10-14 Tag (e) |
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