Technische Details W9425G6EH-5
Description: IC DRAM 256MBIT PAR 66TSOP II, Packaging: Tray, Package / Case: 66-TSSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 2.3V ~ 2.7V, Technology: SDRAM - DDR, Clock Frequency: 250 MHz, Memory Format: DRAM, Supplier Device Package: 66-TSOP II, Write Cycle Time - Word, Page: 15ns, Memory Interface: Parallel, Access Time: 55 ns, Memory Organization: 16M x 16, DigiKey Programmable: Not Verified.
Weitere Produktangebote W9425G6EH-5
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W9425G6EH-5 | Hersteller : Winbond Electronics |
![]() Packaging: Tray Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 250 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP II Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
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