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W947D2HBJX5E

W947D2HBJX5E Winbond Electronics

W947D%282%2C6%29HB.pdf
Hersteller: Winbond Electronics
Description: IC DRAM 128MBIT LVCMOS 90VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 32
Access Time: 5 ns
Memory Interface: LVCMOS
Write Cycle Time - Word, Page: 15ns
Supplier Device Package: 90-VFBGA (8x13)
Memory Format: DRAM
Clock Frequency: 200 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -25°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
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Technische Details W947D2HBJX5E Winbond Electronics

Description: IC DRAM 128MBIT LVCMOS 90VFBGA, Packaging: Tray, DigiKey Programmable: Not Verified, Memory Organization: 4M x 32, Access Time: 5 ns, Memory Interface: LVCMOS, Write Cycle Time - Word, Page: 15ns, Supplier Device Package: 90-VFBGA (8x13), Memory Format: DRAM, Clock Frequency: 200 MHz, Technology: SDRAM - Mobile LPDDR, Voltage - Supply: 1.7V ~ 1.95V, Operating Temperature: -25°C ~ 85°C (TC), Memory Type: Volatile, Memory Size: 128Mbit, Mounting Type: Surface Mount, Package / Case: 90-TFBGA.