WAB300M12BM3 MACOM
Hersteller: MACOMDiscrete Semiconductor Modules SiC, Module, 300A, 1200V, 62mm, BM3, Switching Optimized, Industrial, THB-80, Gen 3
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1490.32 EUR |
| 10+ | 1487.18 EUR |
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Technische Details WAB300M12BM3 MACOM
Description: MOSFET 2N-CH 1200V 382A MODULE, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 382A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 24500pF @ 1000V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 300A, 15V, Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V, Vgs(th) (Max) @ Id: 3.6V @ 92mA, Supplier Device Package: Module, Part Status: Active.
Weitere Produktangebote WAB300M12BM3 nach Preis ab 1487.18 EUR bis 1490.32 EUR
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WAB300M12BM3 | Hersteller : Wolfspeed |
MOSFET Modules SiC, Module, 300A, 1200V, 62mm, BM3, Switching Optimized, Industrial, THB-80 |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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WAB300M12BM3 | Hersteller : Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 382A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 382A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 24500pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 300A, 15V Gate Charge (Qg) (Max) @ Vgs: 908nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 92mA Supplier Device Package: Module Part Status: Active |
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