WAS530M12BM3 Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.Description: MOSFET 2N-CH 1200V 630A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 630A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 1728.36 EUR |
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Technische Details WAS530M12BM3 Wolfspeed, Inc.
Description: MOSFET 2N-CH 1200V 630A, Packaging: Box, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 630A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V, Rds On (Max) @ Id, Vgs: 3.47mOhm @ 530A, 15V, Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V, Vgs(th) (Max) @ Id: 3.6V @ 127mA.
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