WG50N65DHJQ WeEn Semiconductors

Description: IGBT TRENCH FS 650V 91A TO-247-3, Power - Max: 278 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 91 A, Gate Charge: 160 nC, Test Condition: 400V, 50A, 10Ohm, 15V, Switching Energy: 1.7mJ (on), 600µJ (off), Td (on/off) @ 25°C: 66ns/163ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Reverse Recovery Time (trr): 105 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Bulk.