WG50N65DHWQ WeEn Semiconductor(Hong Kong)Co.,Limited
Hersteller: WeEn Semiconductor(Hong Kong)Co.,Limited
Trans IGBT Chip N-CH 650V 91A 278mW 3-Pin(3+Tab) TO-247 Tube
| Anzahl | Privatkunde |
|---|---|
| 600+ | 3.65 EUR |
| 3000+ | 3.49 EUR |
| 6000+ | 3.32 EUR |
| 12000+ | 3.15 EUR |
| 15000+ | 3 EUR |
| 24000+ | 2.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WG50N65DHWQ WeEn Semiconductor(Hong Kong)Co.,Limited
Description: IGBT TRENCH FS 650V 91A TO-247-3, Power - Max: 278 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 91 A, Part Status: Active, Gate Charge: 160 nC, Test Condition: 400V, 50A, 10Ohm, 15V, Switching Energy: 1.7mJ (on), 600µJ (off), Td (on/off) @ 25°C: 66ns/163ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Reverse Recovery Time (trr): 105 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote WG50N65DHWQ nach Preis ab 3.39 EUR bis 9.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WG50N65DHWQ | WeEn Semiconductors |
Description: IGBT TRENCH FS 650V 91A TO-247-3Power - Max: 278 W Current - Collector Pulsed (Icm): 200 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 91 A Part Status: Active Gate Charge: 160 nC Test Condition: 400V, 50A, 10Ohm, 15V Switching Energy: 1.7mJ (on), 600µJ (off) Td (on/off) @ 25°C: 66ns/163ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Reverse Recovery Time (trr): 105 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 411 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
WG50N65DHWQ | WeEn Semiconductors |
IGBTs WG50N65DHW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK |
auf Bestellung 538 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
WG50N65DHWQ | WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - WG50N65DHWQ - IGBT, 91 A, 1.65 V, 278 W, 650 V, TO-247, 3 Pin(s)tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 91A |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
|
| WG50N65DHWQ |
![]() |
Hersteller: WeEn Semiconductors
Description: IGBT TRENCH FS 650V 91A TO-247-3
Power - Max: 278 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 91 A
Part Status: Active
Gate Charge: 160 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.7mJ (on), 600µJ (off)
Td (on/off) @ 25°C: 66ns/163ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Reverse Recovery Time (trr): 105 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT TRENCH FS 650V 91A TO-247-3
Power - Max: 278 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 91 A
Part Status: Active
Gate Charge: 160 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.7mJ (on), 600µJ (off)
Td (on/off) @ 25°C: 66ns/163ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Reverse Recovery Time (trr): 105 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 411 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.71 EUR |
| 30+ | 4.56 EUR |
| 120+ | 3.83 EUR |
| WG50N65DHWQ |
![]() |
Hersteller: WeEn Semiconductors
IGBTs WG50N65DHW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK
IGBTs WG50N65DHW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK
auf Bestellung 538 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.9 EUR |
| 10+ | 4.96 EUR |
| 100+ | 4.08 EUR |
| 600+ | 3.88 EUR |
| 1200+ | 3.58 EUR |
| 3000+ | 3.39 EUR |
| WG50N65DHWQ |
![]() |
Hersteller: WEEN SEMICONDUCTORS
Description: WEEN SEMICONDUCTORS - WG50N65DHWQ - IGBT, 91 A, 1.65 V, 278 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 278W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pins
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 91A
Description: WEEN SEMICONDUCTORS - WG50N65DHWQ - IGBT, 91 A, 1.65 V, 278 W, 650 V, TO-247, 3 Pin(s)
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
hazardous: false
rohsPhthalatesCompliant: YES
Kollektor-Emitter-Sättigungsspannung: 1.65V
usEccn: EAR99
euEccn: NLR
Verlustleistung: 278W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pins
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 650V
productTraceability: No
Betriebstemperatur, max.: 150°C
Kontinuierlicher Kollektorstrom: 91A
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 9.09 EUR |
| 39+ | 6.1 EUR |
| 100+ | 4.58 EUR |



