WG50N65DHWQ WeEn Semiconductors
auf Bestellung 1779 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.77 EUR |
| 10+ | 5.63 EUR |
| 25+ | 3.61 EUR |
| 100+ | 3.01 EUR |
| 250+ | 2.68 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WG50N65DHWQ WeEn Semiconductors
Description: IGBT TRENCH FS 650V 91A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 66ns/163ns, Switching Energy: 1.7mJ (on), 600µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 160 nC, Part Status: Active, Current - Collector (Ic) (Max): 91 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 278 W.
Weitere Produktangebote WG50N65DHWQ nach Preis ab 3.22 EUR bis 6.48 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
WG50N65DHWQ | Hersteller : WeEn Semiconductors |
 Description: IGBT TRENCH FS 650V 91A TO-247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 66ns/163ns Switching Energy: 1.7mJ (on), 600µJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 160 nC Part Status: Active Current - Collector (Ic) (Max): 91 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 278 W |
auf Bestellung 411 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
WG50N65DHWQ | Hersteller : WEEN SEMICONDUCTORS |
Description: WEEN SEMICONDUCTORS - WG50N65DHWQ - IGBT, 91 A, 1.65 V, 278 W, 650 V, TO-247, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 91A |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||
 |
WG50N65DHWQ | Hersteller : Ween |
Trans IGBT Chip N-CH 650V 91A 278000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
|||||||||
| WG50N65DHWQ | Hersteller : WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 160nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 123ns Turn-off time: 265ns |
Produkt ist nicht verfügbar |