WG50N65DHWQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: IGBT TRENCH FS 650V 91A TO-247-3
Power - Max: 278 W
Current - Collector Pulsed (Icm): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 91 A
Part Status: Active
Gate Charge: 160 nC
Test Condition: 400V, 50A, 10Ohm, 15V
Switching Energy: 1.7mJ (on), 600µJ (off)
Td (on/off) @ 25°C: 66ns/163ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Reverse Recovery Time (trr): 105 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 3+ | 6.48 EUR |
| 30+ | 3.83 EUR |
| 120+ | 3.22 EUR |
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Technische Details WG50N65DHWQ WeEn Semiconductors
Description: IGBT TRENCH FS 650V 91A TO-247-3, Power - Max: 278 W, Current - Collector Pulsed (Icm): 200 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 91 A, Part Status: Active, Gate Charge: 160 nC, Test Condition: 400V, 50A, 10Ohm, 15V, Switching Energy: 1.7mJ (on), 600µJ (off), Td (on/off) @ 25°C: 66ns/163ns, IGBT Type: Trench Field Stop, Supplier Device Package: TO-247-3, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Reverse Recovery Time (trr): 105 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote WG50N65DHWQ nach Preis ab 2.75 EUR bis 6.92 EUR
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WG50N65DHWQ | Hersteller : WeEn Semiconductors |
IGBTs WG50N65DHW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK |
auf Bestellung 1779 Stücke: Lieferzeit 10-14 Tag (e) |
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| WG50N65DHWQ | Hersteller : WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 160nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 123ns Turn-off time: 265ns |
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