WG50N65DHWQ WeEn Semiconductors
Hersteller: WeEn Semiconductors
Description: IGBT TRENCH FS 650V 91A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 66ns/163ns
Switching Energy: 1.7mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 91 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 278 W
Description: IGBT TRENCH FS 650V 91A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 66ns/163ns
Switching Energy: 1.7mJ (on), 600µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 160 nC
Part Status: Active
Current - Collector (Ic) (Max): 91 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 278 W
auf Bestellung 556 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.74 EUR |
| 30+ | 4.54 EUR |
| 120+ | 3.89 EUR |
| 510+ | 3.46 EUR |
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Technische Details WG50N65DHWQ WeEn Semiconductors
Description: IGBT TRENCH FS 650V 91A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 66ns/163ns, Switching Energy: 1.7mJ (on), 600µJ (off), Test Condition: 400V, 50A, 10Ohm, 15V, Gate Charge: 160 nC, Part Status: Active, Current - Collector (Ic) (Max): 91 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 278 W.
Weitere Produktangebote WG50N65DHWQ nach Preis ab 4.32 EUR bis 8.42 EUR
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WG50N65DHWQ | Hersteller : WeEn Semiconductors | IGBT Transistors WG50N65DHW/TO-247/STANDARD MARKING * HORIZONTAL, RAIL PACK |
auf Bestellung 5641 Stücke: Lieferzeit 14-28 Tag (e) |
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WG50N65DHWQ | Hersteller : WEEN SEMICONDUCTORS |
 Description: WEEN SEMICONDUCTORS - WG50N65DHWQ - IGBT, 91 A, 1.65 V, 278 W, 650 V, TO-247, 3 Pin(s)tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pins Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 150°C Kontinuierlicher Kollektorstrom: 91A |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
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WG50N65DHWQ | Hersteller : Ween |
Trans IGBT Chip N-CH 650V 91A 278000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| WG50N65DHWQ | Hersteller : WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 160nC Kind of package: tube Turn-on time: 123ns Turn-off time: 265ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| WG50N65DHWQ | Hersteller : WeEn Semiconductors |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 111W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 111W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 160nC Kind of package: tube Turn-on time: 123ns Turn-off time: 265ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |