WM02N20F WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 1.76nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 0.35W
Case: DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 1.76nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details WM02N20F WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 350mW; DFN1006-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 2A, Pulsed drain current: 8A, Power dissipation: 0.35W, Case: DFN1006-3, Gate-source voltage: ±12V, On-state resistance: 0.105Ω, Mounting: SMD, Gate charge: 1.76nC, Kind of package: reel; tape, Kind of channel: enhancement.