WM02N50M WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Gate charge: 9.6nC
On-state resistance: 21mΩ
Drain current: 5A
Pulsed drain current: 28A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Gate charge: 9.6nC
On-state resistance: 21mΩ
Drain current: 5A
Pulsed drain current: 28A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2963 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 472+ | 0.15 EUR |
| 1097+ | 0.065 EUR |
| 1593+ | 0.045 EUR |
| 1761+ | 0.041 EUR |
| 3000+ | 0.032 EUR |
| 6000+ | 0.031 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WM02N50M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Power dissipation: 1.25W, Case: SOT23, Mounting: SMD, Kind of package: reel; tape, Gate charge: 9.6nC, On-state resistance: 21mΩ, Drain current: 5A, Pulsed drain current: 28A, Gate-source voltage: ±12V, Drain-source voltage: 20V, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM02N50M nach Preis ab 0.041 EUR bis 0.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WM02N50M | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 1.25W Case: SOT23 Mounting: SMD Kind of package: reel; tape Gate charge: 9.6nC On-state resistance: 21mΩ Drain current: 5A Pulsed drain current: 28A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement |
auf Bestellung 2963 Stücke: Lieferzeit 14-21 Tag (e) |
|