WM02N50M WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 21mΩ
Gate charge: 9.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 5A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.25W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 21mΩ
Gate charge: 9.6nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 28A
Drain-source voltage: 20V
Drain current: 5A
auf Bestellung 2963 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 481+ | 0.15 EUR |
| 1117+ | 0.064 EUR |
| 1598+ | 0.045 EUR |
| 2110+ | 0.034 EUR |
| 2233+ | 0.032 EUR |
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Technische Details WM02N50M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 28A; 1.25W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Power dissipation: 1.25W, Case: SOT23, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 21mΩ, Gate charge: 9.6nC, Kind of channel: enhancement, Gate-source voltage: ±12V, Pulsed drain current: 28A, Drain-source voltage: 20V, Drain current: 5A.