WM02P60M2 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -18A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 152+ | 0.47 EUR |
| 439+ | 0.16 EUR |
| 736+ | 0.097 EUR |
| 820+ | 0.087 EUR |
| 926+ | 0.077 EUR |
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Technische Details WM02P60M2 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 350mW; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -6A, Pulsed drain current: -18A, Power dissipation: 0.35W, Case: SOT23, Gate-source voltage: ±10V, On-state resistance: 23mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.