WM03P56M2 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 28.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -5.6A; Idm: -22.4A; 2W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.6A
Pulsed drain current: -22.4A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 28.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2780 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 200+ | 0.36 EUR |
| 582+ | 0.12 EUR |
| 962+ | 0.074 EUR |
| 1073+ | 0.067 EUR |
| 1266+ | 0.056 EUR |
| 1341+ | 0.053 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WM03P56M2 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -5.6A; Idm: -22.4A; 2W; SOT23, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -5.6A, Pulsed drain current: -22.4A, Power dissipation: 2W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 28mΩ, Mounting: SMD, Gate charge: 28.7nC, Kind of package: reel; tape, Kind of channel: enhancement.