WM05N02G WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Pulsed drain current: 0.88A
Power dissipation: 0.3W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 400+ | 0.18 EUR |
| 875+ | 0.082 EUR |
| 2101+ | 0.034 EUR |
| 2326+ | 0.031 EUR |
| 3000+ | 0.024 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WM05N02G WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.22A, Pulsed drain current: 0.88A, Power dissipation: 0.3W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 2.1Ω, Mounting: SMD, Gate charge: 1.5nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM05N02G nach Preis ab 0.031 EUR bis 0.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WM05N02G | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; Idm: 0.88A; 300mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Pulsed drain current: 0.88A Power dissipation: 0.3W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 2.1Ω Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|