WM06N03LE WAYON
Hersteller: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.34A
Pulsed drain current: 1.36A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.06nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2900 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 179+ | 0.4 EUR |
| 400+ | 0.18 EUR |
| 881+ | 0.081 EUR |
| 2101+ | 0.034 EUR |
| 2337+ | 0.031 EUR |
| 3000+ | 0.024 EUR |
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Technische Details WM06N03LE WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 0.34A, Pulsed drain current: 1.36A, Power dissipation: 0.3W, Case: SOT523, Gate-source voltage: ±20V, On-state resistance: 2Ω, Mounting: SMD, Gate charge: 1.06nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM06N03LE nach Preis ab 0.031 EUR bis 0.4 EUR
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WM06N03LE | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 340mA; Idm: 1.36A; 300mW; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.34A Pulsed drain current: 1.36A Power dissipation: 0.3W Case: SOT523 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.06nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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