WM10N02G WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.5A
Gate charge: 1.5nC
| Anzahl | Privatkunde |
|---|---|
| 186+ | 0.46 EUR |
| 417+ | 0.2 EUR |
| 920+ | 0.093 EUR |
| 2193+ | 0.039 EUR |
| 2440+ | 0.035 EUR |
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Technische Details WM10N02G WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 0.2A, Power dissipation: 0.2W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 6Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 0.5A, Gate charge: 1.5nC.

