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WM10N02G WAYON



Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.2W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.5A
Gate charge: 1.5nC
auf Bestellung 2944 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
186+0.46 EUR
417+0.2 EUR
920+0.093 EUR
2193+0.039 EUR
2440+0.035 EUR
Mindestbestellmenge: 186 Stücke
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Technische Details WM10N02G WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.5A; 200mW, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 0.2A, Power dissipation: 0.2W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 6Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 0.5A, Gate charge: 1.5nC.