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WM10N02M WAYON

Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Gate charge: 1.5nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 6Ω
Mounting: SMD

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Technische Details WM10N02M WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23, Pulsed drain current: 0.8A, Power dissipation: 0.35W, Gate charge: 1.5nC, Polarisation: unipolar, Drain current: 0.2A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: SOT23, On-state resistance: 6Ω, Mounting: SMD.