WM10N02M WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.2A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 0.8A
Gate charge: 1.5nC
| Anzahl | Privatkunde |
|---|---|
| 152+ | 0.56 EUR |
| 404+ | 0.21 EUR |
| 572+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WM10N02M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 200mA; Idm: 0.8A; 350mW; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 0.2A, Power dissipation: 0.35W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 6Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 0.8A, Gate charge: 1.5nC.

