WM10N20M WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 5.3nC
| Anzahl | Privatkunde |
|---|---|
| 162+ | 0.52 EUR |
| 463+ | 0.18 EUR |
| 1087+ | 0.079 EUR |
| 1558+ | 0.055 EUR |
| 1725+ | 0.049 EUR |
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Technische Details WM10N20M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 2A; Idm: 8A; 1.2W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 2A, Power dissipation: 1.2W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.28Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 8A, Gate charge: 5.3nC.

