WM10N33M WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Pulsed drain current: 13.2A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2888 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 167+ | 0.43 EUR |
| 491+ | 0.15 EUR |
| 1180+ | 0.061 EUR |
| 1316+ | 0.054 EUR |
| 1656+ | 0.043 EUR |
| 1755+ | 0.041 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WM10N33M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.3A, Pulsed drain current: 13.2A, Power dissipation: 1.5W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.13Ω, Mounting: SMD, Gate charge: 4nC, Kind of package: reel; tape, Kind of channel: enhancement.