
WM10N33M WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.3A
Power dissipation: 1.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4nC
Pulsed drain current: 13.2A
auf Bestellung 2888 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
506+ | 0.14 EUR |
1202+ | 0.059 EUR |
1348+ | 0.053 EUR |
1651+ | 0.043 EUR |
1743+ | 0.041 EUR |
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Technische Details WM10N33M WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3.3A; Idm: 13.2A; 1.5W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.3A, Power dissipation: 1.5W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.13Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 4nC, Pulsed drain current: 13.2A.