WM10N35M2 WAYON
Hersteller: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 1.65W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2681 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 363+ | 0.2 EUR |
| 601+ | 0.12 EUR |
| 673+ | 0.11 EUR |
| 754+ | 0.095 EUR |
| 3000+ | 0.085 EUR |
| 6000+ | 0.082 EUR |
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Technische Details WM10N35M2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.5A, Power dissipation: 1.65W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 90mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 21nC, Pulsed drain current: 14A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM10N35M2 nach Preis ab 0.095 EUR bis 0.57 EUR
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WM10N35M2 | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 1.65W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Power dissipation: 1.65W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Pulsed drain current: 14A |
auf Bestellung 2681 Stücke: Lieferzeit 14-21 Tag (e) |
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