WM10N35M3 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 348+ | 0.21 EUR |
| 574+ | 0.12 EUR |
| 645+ | 0.11 EUR |
| 760+ | 0.094 EUR |
| 804+ | 0.089 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WM10N35M3 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.5A, Pulsed drain current: 14A, Power dissipation: 2W, Case: SOT23-6, Gate-source voltage: ±20V, On-state resistance: 0.1Ω, Mounting: SMD, Gate charge: 21nC, Kind of package: reel; tape, Kind of channel: enhancement.