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WM10N35M3

WM10N35M3 WAYON

WM10N35M3.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 14A
Gate charge: 21nC
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Lieferzeit 14-21 Tag (e)
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120+0.71 EUR
336+0.25 EUR
562+0.15 EUR
625+0.13 EUR
705+0.12 EUR
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Technische Details WM10N35M3 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.5A, Power dissipation: 2W, Case: SOT23-6, Gate-source voltage: ±20V, On-state resistance: 0.1Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 14A, Gate charge: 21nC.