WM10N35M3 WAYON
Hersteller: WAYONCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Power dissipation: 2W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Pulsed drain current: 14A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2966 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 348+ | 0.21 EUR |
| 575+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 3000+ | 0.089 EUR |
| 6000+ | 0.086 EUR |
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Technische Details WM10N35M3 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 3.5A, Power dissipation: 2W, Case: SOT23-6, Gate-source voltage: ±20V, On-state resistance: 0.1Ω, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Gate charge: 21nC, Pulsed drain current: 14A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WM10N35M3 nach Preis ab 0.099 EUR bis 0.59 EUR
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WM10N35M3 | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 2W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Power dissipation: 2W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 21nC Pulsed drain current: 14A |
auf Bestellung 2966 Stücke: Lieferzeit 14-21 Tag (e) |
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