WM12N35M2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 3.5A; Idm: 14A; 2.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 3.5A; Idm: 14A; 2.5W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 2.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 350+ | 0.2 EUR |
| 577+ | 0.12 EUR |
| 649+ | 0.11 EUR |
| 763+ | 0.094 EUR |
| 807+ | 0.089 EUR |
| 3000+ | 0.088 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WM12N35M2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 3.5A; Idm: 14A; 2.5W; SOT23, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 120V, Drain current: 3.5A, Pulsed drain current: 14A, Power dissipation: 2.5W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.17Ω, Mounting: SMD, Gate charge: 14nC, Kind of package: reel; tape, Kind of channel: enhancement.