WMB010N04LG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 268A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 118nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1072A
Case: PDFN5060-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W
Mounting: SMD
Drain-source voltage: 40V
Drain current: 268A
On-state resistance: 1mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 118nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1072A
Case: PDFN5060-8
auf Bestellung 22 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 3.25 EUR |
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Technische Details WMB010N04LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 268A; Idm: 1072A; 114W, Mounting: SMD, Drain-source voltage: 40V, Drain current: 268A, On-state resistance: 1mΩ, Type of transistor: N-MOSFET, Power dissipation: 114W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 118nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 1072A, Case: PDFN5060-8.