WMB014N04LG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Gate charge: 116nC
On-state resistance: 1.4mΩ
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain current: 165A
Drain-source voltage: 40V
Pulsed drain current: 660A
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W
Gate charge: 116nC
On-state resistance: 1.4mΩ
Power dissipation: 62.5W
Gate-source voltage: ±20V
Drain current: 165A
Drain-source voltage: 40V
Pulsed drain current: 660A
Case: PDFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 69+ | 1.03 EUR |
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Technische Details WMB014N04LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 165A; Idm: 660A; 62.5W, Gate charge: 116nC, On-state resistance: 1.4mΩ, Power dissipation: 62.5W, Gate-source voltage: ±20V, Drain current: 165A, Drain-source voltage: 40V, Pulsed drain current: 660A, Case: PDFN5060-8, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel; tape, Mounting: SMD, Polarisation: unipolar.