WMB017N03LG2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 63.3A
Pulsed drain current: 400A
Power dissipation: 30.5W
Case: PDFN5060-8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 83+ | 0.87 EUR |
| 84+ | 0.86 EUR |
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Technische Details WMB017N03LG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 63.3A; Idm: 400A; 30.5W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 63.3A, Pulsed drain current: 400A, Power dissipation: 30.5W, Case: PDFN5060-8, Gate-source voltage: ±20V, On-state resistance: 2.5mΩ, Mounting: SMD, Gate charge: 46nC, Kind of channel: enhancement.